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Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC

Received: 26 April 2022    Accepted:     Published: 28 April 2022
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Abstract

In order to predict the effect of heavy ion irradiation more accurately, the ion distribution and stoping power of Au irradiated silicon (Si) and silicon carbide (SiC) under various energy conditions were calculated by using SRIM program, and compared with the experimental values. It was found that the projeced range and divergence predicted by SRIM were significantly smaller, and the stopping power was significantly larger by about 25%. Therefore, the method of reducing the target density parameters was tried to make corrections. It was found that the gold ion distribution became deeper after the density decreased, the stopping power became smaller, and the curve was closer to the experiment with an error of only ~5%. The density reduction coefficient is introduced since there is no definite conclusion on how much density decreases. Based on a large number of previous experimental data, SRIM was used to calculate the density reduction coefficient values under different energy conditions repeatedly, and found that there is a corresponding relationship between the values and energy values. Finally, the polynomial regression fitting method was used to obtain their functional expressions, which laid a foundation for the prediction of Si and SiC irradiated by heavy ions.

Published in Science Discovery (Volume 10, Issue 2)
DOI 10.11648/j.sd.20221002.20
Page(s) 76-81
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2024. Published by Science Publishing Group

Keywords

SRIM, Ion Irradiation, Au Ion Distribution, Stoping Power

References
[1] JIN K, ZHANG Y, XUE H. Ion distribution and electronic stopping power for Au ions in silicon carbide [J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2013, 307: 65-70.
[2] ZIEGLER J F, ZIEGLER M D, BIERSACK J P. SRIM – The stopping and range of ions in matter (2010)[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2010, 268 (11-12): 1818-1823.
[3] HOBLER G, BOURDELLE K K, AKATSU T. Random and channeling stopping power of H in Si below 100 keV [J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 2006, 242 (1-2): 617-619.
[4] ZHANG Y, BAE I T, SUN K. Damage profile and ion distribution of slow heavy ions in compounds [J]. Journal of Applied Physics, 2009, 105 (10): 104901.
[5] XUE H Z, ZHANG Y, ZHU Z. Damage profiles and ion distribution in Pt-irradiated SiC[C]//Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms: 286. 2012: 114-118.
[6] HOFSAESS H, ZHANG K, MUTZKE A. Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIM [J]. Applied Surface Science, 2014, 310: 134-141.
[7] LI Y G, YANG Y, SHORT M P. IM3D: A parallel Monte Carlo code for efficient simulations of primary radiation displacements and damage in 3D geometry[J]. Scientific Reports, 2015, 5: 18130.
[8] P. SIGMUND. Reciprocity in the electronic stopping of slow ions in matter [J]. European Physical Journal D, 2008, 47 (1): 45-54.
[9] WEBER W J, ZHANG Y. Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: Challenges and recommendations[J]. Current Opinion in Solid State and Materials Science, 2019, 23 (4): 100757.
[10] JIN K, ZHANG Y, ZHU Z. Electronic stopping powers for heavy ions in SiC and SiO2 [J]. Journal of Applied Physics, 2014, 115: 044903-044903.
[11] ZHANG Y, WEBER W J, WANG C M. Electronic stopping powers in silicon carbide[J]. Physical Review B, 2004, 69 (20): 205201.
[12] Behar M, Fichtner P, Grande P, et al. Ranges in Si and Lighter Mono and Multielement Targets [J]. Materials Science & Engineering R-Reports, 1995, 15 (1-2): 1-83.
[13] MIKSOVA R, MACKOVA A, JAGEROVA A. Structural study and ion-beam channelling in Si < 1 0 0 > modified by Kr+, Ag+, Ag2+ and Au+, Au2+ ions [J]. Applied Surface Science, 2018, 458: 722-733.
[14] WANG K M, MENG M Q, LU F. Rutherford backscattering/channeling study of the implanted MeV Au+ in silicon [J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology, 1999, 57 (2): 92-96.
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    Yecheng Gao, Jiangcheng Cao, Hongtao Man. (2022). Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC. Science Discovery, 10(2), 76-81. https://doi.org/10.11648/j.sd.20221002.20

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    ACS Style

    Yecheng Gao; Jiangcheng Cao; Hongtao Man. Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC. Sci. Discov. 2022, 10(2), 76-81. doi: 10.11648/j.sd.20221002.20

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    AMA Style

    Yecheng Gao, Jiangcheng Cao, Hongtao Man. Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC. Sci Discov. 2022;10(2):76-81. doi: 10.11648/j.sd.20221002.20

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  • @article{10.11648/j.sd.20221002.20,
      author = {Yecheng Gao and Jiangcheng Cao and Hongtao Man},
      title = {Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC},
      journal = {Science Discovery},
      volume = {10},
      number = {2},
      pages = {76-81},
      doi = {10.11648/j.sd.20221002.20},
      url = {https://doi.org/10.11648/j.sd.20221002.20},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.sd.20221002.20},
      abstract = {In order to predict the effect of heavy ion irradiation more accurately, the ion distribution and stoping power of Au irradiated silicon (Si) and silicon carbide (SiC) under various energy conditions were calculated by using SRIM program, and compared with the experimental values. It was found that the projeced range and divergence predicted by SRIM were significantly smaller, and the stopping power was significantly larger by about 25%. Therefore, the method of reducing the target density parameters was tried to make corrections. It was found that the gold ion distribution became deeper after the density decreased, the stopping power became smaller, and the curve was closer to the experiment with an error of only ~5%. The density reduction coefficient is introduced since there is no definite conclusion on how much density decreases. Based on a large number of previous experimental data, SRIM was used to calculate the density reduction coefficient values under different energy conditions repeatedly, and found that there is a corresponding relationship between the values and energy values. Finally, the polynomial regression fitting method was used to obtain their functional expressions, which laid a foundation for the prediction of Si and SiC irradiated by heavy ions.},
     year = {2022}
    }
    

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  • TY  - JOUR
    T1  - Research on Ion Distribution and Stoping Power for Au Ions Irradiation Si, SiC
    AU  - Yecheng Gao
    AU  - Jiangcheng Cao
    AU  - Hongtao Man
    Y1  - 2022/04/28
    PY  - 2022
    N1  - https://doi.org/10.11648/j.sd.20221002.20
    DO  - 10.11648/j.sd.20221002.20
    T2  - Science Discovery
    JF  - Science Discovery
    JO  - Science Discovery
    SP  - 76
    EP  - 81
    PB  - Science Publishing Group
    SN  - 2331-0650
    UR  - https://doi.org/10.11648/j.sd.20221002.20
    AB  - In order to predict the effect of heavy ion irradiation more accurately, the ion distribution and stoping power of Au irradiated silicon (Si) and silicon carbide (SiC) under various energy conditions were calculated by using SRIM program, and compared with the experimental values. It was found that the projeced range and divergence predicted by SRIM were significantly smaller, and the stopping power was significantly larger by about 25%. Therefore, the method of reducing the target density parameters was tried to make corrections. It was found that the gold ion distribution became deeper after the density decreased, the stopping power became smaller, and the curve was closer to the experiment with an error of only ~5%. The density reduction coefficient is introduced since there is no definite conclusion on how much density decreases. Based on a large number of previous experimental data, SRIM was used to calculate the density reduction coefficient values under different energy conditions repeatedly, and found that there is a corresponding relationship between the values and energy values. Finally, the polynomial regression fitting method was used to obtain their functional expressions, which laid a foundation for the prediction of Si and SiC irradiated by heavy ions.
    VL  - 10
    IS  - 2
    ER  - 

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Author Information
  • State Key Laboratory of High-End Server & Storage Technology, Jinan, China; Shandong Inspur Artificial Intelligence Research Institute Co., Ltd, Jinan, China; Inspur Electronic Information Industry Co., Ltd, Jinan, China

  • State Key Laboratory of High-End Server & Storage Technology, Jinan, China; Shandong Inspur Artificial Intelligence Research Institute Co., Ltd, Jinan, China; Inspur Electronic Information Industry Co., Ltd, Jinan, China

  • State Key Laboratory of High-End Server & Storage Technology, Jinan, China; Shandong Inspur Artificial Intelligence Research Institute Co., Ltd, Jinan, China; Inspur Electronic Information Industry Co., Ltd, Jinan, China

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