In this paper we have study the AZO/ZnO/CdS/CIGS/Mo/SLG heterojunction. We have study precisely the effect of Cu2O insertion between CIGS layer and Mo left contact. For this, we fix the Cu2O thickness at 100 nm. After this, we replace Cu2O by KF material with the same thickness. The use of those materials is motivated by their photovoltaic properties, their metallic content but also their non toxicity compared to PbS. By using SCAPS_1D software we have stimulated the effect of those buffer layers materials in electrical parameters as efficiency of solar cell, file factor, open-circuit voltage and short-circuit current density. Then, the efficiencies are around 24, 64% and 24.80% respectively for Cu2O and KF. We note that the efficiency increases at 21% to 24%. This introduction allows to establish a record efficiency for this kind of structure We note the same behavior for the file factor at 78.91% to 79.74% and 80.10% respectively for Cu2O and KF. These high electrical performances have obtained by using an Aluminum left contact and Molybdenum back contact. The functional temperature variation allows to obtain 26.20% and 25.99% efficiency for KF and Cu2O at 278.16 K. This functional temperature variation shows that by using phase change materials, we can attempt a record efficiency of 26%. This result is an improvement of 2% compared to ambient temperature. At the same time, this study shows that we have a big photovoltaic potential in the winter and in temperate area, near the pole area. This allows to find more recoiling technologies in order to improve more the efficiency of photovoltaic solar cells.
| Published in | Advances in Materials (Volume 14, Issue 4) |
| DOI | 10.11648/j.am.20251404.13 |
| Page(s) | 105-112 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2025. Published by Science Publishing Group |
KF, Cu2O, Buffer Layers, CIGS, Functional Temperature, SCAPS_1D
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APA Style
Diedhiou, A., Diallo, K., Wade, I., Ehemba, A., Ba, M. A., et al. (2025). Effect of Buffer Layers Cu2O and KF Between Molybdenum and CIGS in the Electrical Parameters of CIGS Thin Film Solar Cells. Advances in Materials, 14(4), 105-112. https://doi.org/10.11648/j.am.20251404.13
ACS Style
Diedhiou, A.; Diallo, K.; Wade, I.; Ehemba, A.; Ba, M. A., et al. Effect of Buffer Layers Cu2O and KF Between Molybdenum and CIGS in the Electrical Parameters of CIGS Thin Film Solar Cells. Adv. Mater. 2025, 14(4), 105-112. doi: 10.11648/j.am.20251404.13
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Download@article{10.11648/j.am.20251404.13,
author = {Aliou Diedhiou and Khamissa Diallo and Ibrahima Wade and Alain Ehemba and Mamadou Alpha Ba and Moustapha Dieng},
title = {Effect of Buffer Layers Cu2O and KF Between Molybdenum and CIGS in the Electrical Parameters of CIGS Thin Film Solar Cells
},
journal = {Advances in Materials},
volume = {14},
number = {4},
pages = {105-112},
doi = {10.11648/j.am.20251404.13},
url = {https://doi.org/10.11648/j.am.20251404.13},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.am.20251404.13},
abstract = {In this paper we have study the AZO/ZnO/CdS/CIGS/Mo/SLG heterojunction. We have study precisely the effect of Cu2O insertion between CIGS layer and Mo left contact. For this, we fix the Cu2O thickness at 100 nm. After this, we replace Cu2O by KF material with the same thickness. The use of those materials is motivated by their photovoltaic properties, their metallic content but also their non toxicity compared to PbS. By using SCAPS_1D software we have stimulated the effect of those buffer layers materials in electrical parameters as efficiency of solar cell, file factor, open-circuit voltage and short-circuit current density. Then, the efficiencies are around 24, 64% and 24.80% respectively for Cu2O and KF. We note that the efficiency increases at 21% to 24%. This introduction allows to establish a record efficiency for this kind of structure We note the same behavior for the file factor at 78.91% to 79.74% and 80.10% respectively for Cu2O and KF. These high electrical performances have obtained by using an Aluminum left contact and Molybdenum back contact. The functional temperature variation allows to obtain 26.20% and 25.99% efficiency for KF and Cu2O at 278.16 K. This functional temperature variation shows that by using phase change materials, we can attempt a record efficiency of 26%. This result is an improvement of 2% compared to ambient temperature. At the same time, this study shows that we have a big photovoltaic potential in the winter and in temperate area, near the pole area. This allows to find more recoiling technologies in order to improve more the efficiency of photovoltaic solar cells.},
year = {2025}
}
TY - JOUR T1 - Effect of Buffer Layers Cu2O and KF Between Molybdenum and CIGS in the Electrical Parameters of CIGS Thin Film Solar Cells AU - Aliou Diedhiou AU - Khamissa Diallo AU - Ibrahima Wade AU - Alain Ehemba AU - Mamadou Alpha Ba AU - Moustapha Dieng Y1 - 2025/11/22 PY - 2025 N1 - https://doi.org/10.11648/j.am.20251404.13 DO - 10.11648/j.am.20251404.13 T2 - Advances in Materials JF - Advances in Materials JO - Advances in Materials SP - 105 EP - 112 PB - Science Publishing Group SN - 2327-252X UR - https://doi.org/10.11648/j.am.20251404.13 AB - In this paper we have study the AZO/ZnO/CdS/CIGS/Mo/SLG heterojunction. We have study precisely the effect of Cu2O insertion between CIGS layer and Mo left contact. For this, we fix the Cu2O thickness at 100 nm. After this, we replace Cu2O by KF material with the same thickness. The use of those materials is motivated by their photovoltaic properties, their metallic content but also their non toxicity compared to PbS. By using SCAPS_1D software we have stimulated the effect of those buffer layers materials in electrical parameters as efficiency of solar cell, file factor, open-circuit voltage and short-circuit current density. Then, the efficiencies are around 24, 64% and 24.80% respectively for Cu2O and KF. We note that the efficiency increases at 21% to 24%. This introduction allows to establish a record efficiency for this kind of structure We note the same behavior for the file factor at 78.91% to 79.74% and 80.10% respectively for Cu2O and KF. These high electrical performances have obtained by using an Aluminum left contact and Molybdenum back contact. The functional temperature variation allows to obtain 26.20% and 25.99% efficiency for KF and Cu2O at 278.16 K. This functional temperature variation shows that by using phase change materials, we can attempt a record efficiency of 26%. This result is an improvement of 2% compared to ambient temperature. At the same time, this study shows that we have a big photovoltaic potential in the winter and in temperate area, near the pole area. This allows to find more recoiling technologies in order to improve more the efficiency of photovoltaic solar cells. VL - 14 IS - 4 ER -
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
Physics Department, University Cheikh Anta DIOP of Dakar, Dakar, Senegal
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