To date, no approaches have been reported to fabricate the ZnO nano-stripes arrays on zinc foil substrate. In this method, zinc (Zn) foil was applied as substrates. The ZnO nano-stripes arrays on zinc foil substrate were prepared via photoelectrochemical (PEC) wet etching method without using templates and catalysts. To prepare ZnO nano-stripes structures, the samples were dipped into a mixture of HNO3:Ethanol (1:5) with current densities of 127 mA/cm2, and subjected to external illumination from a 100W lamp. The constant etch time is 30 min. After etching, the surface morphology and the nano-stripes structure of the ZnO films were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). XRD pattern confirmed that the hexagonal wurtzite structure of ZnO nano-stripes were of polycrystalline structure. The optical properties of the ZnO nano-stripes arrays were characterized by Raman and photoluminescence spectroscopies at room temperature (RT). Micro-Raman results showed that A1(LO) of hexagonal ZnO nano-stripes have been observed at 520 cm-1. PL spectrum peak is obvious at 368 cm-1 for ZnO film grown on zinc foil substrate. The PL spectrum peak position in ZnO nano-stripe is blue-shifted with respect to that in unstrained ZnO bulk (381nm). This can be clarified by the approximately smaller statistical area spreading of the nano-stripes. Nano-stripes ZnO can be used as a buffer or intermediate layer to lessen substrate-induced strain, similar to porous silicon.
| Published in | International Journal of Materials Science and Applications (Volume 2, Issue 2) |
| DOI | 10.11648/j.ijmsa.20130202.17 |
| Page(s) | 74-77 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2013. Published by Science Publishing Group |
Nano-Stripes, Zno, PEC, SEM, XRD, Raman, PL
| [1] | Z. W. Pan, Z. R. Dai, Z. L. Wang, Nanobelts of Semiconducting Oxides. Science, 291 (2001) 1947–1949. |
| [2] | Z.L. Wang, J. H. Song, Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays. Science, 312, (2006) 242–246. |
| [3] | S.H. Lee, H. J. Lee, D. Oh, S. W. Lee, H. Goto, R. Buckmaster, T. Yasukawa, T. Matsue, S. K. Hong, M. W. Cho, T. Yao, Control of the ZnO Nanowires Nucleation Site Using Microfluidic Channels. J. Phys. Chem. B 110, (2006) 3856 – 3859. |
| [4] | Y. Li, F. Qian, J. Xiang, C. M. Lieber, Nanowire Electronic and Optoelectronic Devices. Mater. Today, 9, (2006) 18–25. |
| [5] | J. M. Bao, M. A. Zimmler, F. Capasso, Broadband ZnO Single-Nanowire Light-Emitting Diode. Nano Lett. 6 (2006) 1719–1722. |
| [6] | J. T. Hu, T. W. Odom, C.M. Lieber, Chemistry and Physics in One Dimension: Synthesis and Properties of Nanowires and Nanotube. Acc. Chem. Res. 32, (1999) 435–445. |
| [7] | H. J. Fan, P. Werner, M. Zacharias, Semiconductor Nanowires: From Self-Organization to Patterned Growth. Small, 2, (2006) 700–717. |
| [8] | W. W. Wang, Y. J. Zhu, L.X. Yang, ZnO-SnO2 Hollow Spheres and Hierarchical Nanosheets: Hydrothermal Preparation, Formation Mechanism, and Photocatalytic Properties. Adv. Funct. Mater. 17, (2007) 59–64. |
| [9] | C. W. Cheng, G. Y. Xu, H. Q. Zhang, Y. Luo, Fabricating ZnO Nanorods Sensor for Chemical Gas Detection at Room Temperature. J. Nanosci. Nanotechnol, 7, (2007) 4439–4442. |
| [10] | H. Y. Yang, S.P. Lau, S. F. Yu, A. P. Abiyasa, M. Tanemura, T. Okita, H. Hatano, High-Temperature Random Lasing in ZnO Nanoneedles. Appl. Phys. Lett. 89, (2006) 011103. |
| [11] | L. E. Greene, M. Law, D. H. Tan, M. Montano, J. Goldberger, G. Somorjai, P. D. Yang, General Route to Vertical ZnO Nanowire Arrays Using Textured ZnO Seeds. Nano Lett. 5, (2005) 1231–1236. |
| [12] | L. Vayssieres, Growth of Arrayed Nanorods and Nanowires of ZnO from Aqueous Solution. Adv. Mater., 15, (2003) 464–466. |
| [13] | H. J. Fan, M. Zacharias, Manipulation of Crawling Growth for the Formation of Sub-Millimeter Long ZnO Nanowalls. J. Mater. Sci. Technol. 24, (2008) 589–593. |
| [14] | L.S. Chuah, Z. Hassan, S.S. Ng, H. Abu Hassan, Porous Si(111) and Si(100) as an intermediate buffer layer for nanocrystalline InN films, Journal of Alloys and Compounds 479, (2009) L54-L58. |
| [15] | L.S. Chuah, Z. Hassan, H. Abu Hassan, Nanoporous InN films synthesized using photoelectrochemical wet etching, IEEE International Conference on Semiconductor Electronics Proceedings (ICSE), (2006) 618-621. |
| [16] | Y. X. Wang, X. Y. Li, G. Lu, X. Quan, G. H. Chen, Highly oriented 1-D nanorod arrays on zinc foil: direct growth from substrate, optical properties and photocatalytic activities, J. Phys. Chem. C, 112 (2008) 7332-7336. |
| [17] | L.S. Chuah, Z. Hassan, H. Abu Hassan, Optical characterization of nanoporous GaN through electroless wet chemical etching, Materials Science-Poland, Vol. 26, No. 3, (2008) 609-615. |
| [18] | L.S. Chuah, Z. Hassan, H. Abu Hassan, Optical characterization of GaN thin film grown on Si(111) by radio-frequency plasma-assisted molecular beam epitaxy, Malaysia-Japan International Symposium on Advanced Technology (MJISAT), 1-6 (2007) - on CD. |
| [19] | J. H. Yang, J. H. Zheng, H. J. Zhai, L. L. Yang, Low temperature hydrothermal growth and optical properties of ZnO nanorods, Cryst. Res. Technol. 44, (2009) 87-91. |
| [20] | P.S. Xu, Y. M. Sun, C. S. Shi, F. Q. Xu, H. B. Pan, Native point defect states in ZnO, Chinese Physics Letters, 18 (2001) 1252-1253. |
| [21] | L.S. Chuah, M. A. Ahmad, Z. Hassan, Nanocrystalline ZnO film grown on porous SnO2/Si(111) substrates, Composit Interfaces, 18 (2011) 627-632. |
| [22] | L.S. Chuah, Z. Hassan, S.K. Mohd Bakhori, Optical analysis of nanocrystalline ZnO films coated on porous silicon by Radio Frequency (RF) Magnetron Sputtering, Composite Interfaces, 18 (2011) 441-448. |
| [23] | L.S. Chuah, Z. Hassan, S. S. Tneh, Single crystalline ZnO nanowires by oxidizing granular zinc film, Journal of Dispersion Science and Technology, 32 (2011) 677-679. |
APA Style
L. S. Chuah, Asmiet Ramizy, M. A. Mahdi, Z. Hassan. (2013). Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method. International Journal of Materials Science and Applications, 2(2), 74-77. https://doi.org/10.11648/j.ijmsa.20130202.17
ACS Style
L. S. Chuah; Asmiet Ramizy; M. A. Mahdi; Z. Hassan. Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method. Int. J. Mater. Sci. Appl. 2013, 2(2), 74-77. doi: 10.11648/j.ijmsa.20130202.17
AMA Style
L. S. Chuah, Asmiet Ramizy, M. A. Mahdi, Z. Hassan. Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method. Int J Mater Sci Appl. 2013;2(2):74-77. doi: 10.11648/j.ijmsa.20130202.17
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Download@article{10.11648/j.ijmsa.20130202.17,
author = {L. S. Chuah and Asmiet Ramizy and M. A. Mahdi and Z. Hassan},
title = {Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method},
journal = {International Journal of Materials Science and Applications},
volume = {2},
number = {2},
pages = {74-77},
doi = {10.11648/j.ijmsa.20130202.17},
url = {https://doi.org/10.11648/j.ijmsa.20130202.17},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20130202.17},
abstract = {To date, no approaches have been reported to fabricate the ZnO nano-stripes arrays on zinc foil substrate. In this method, zinc (Zn) foil was applied as substrates. The ZnO nano-stripes arrays on zinc foil substrate were prepared via photoelectrochemical (PEC) wet etching method without using templates and catalysts. To prepare ZnO nano-stripes structures, the samples were dipped into a mixture of HNO3:Ethanol (1:5) with current densities of 127 mA/cm2, and subjected to external illumination from a 100W lamp. The constant etch time is 30 min. After etching, the surface morphology and the nano-stripes structure of the ZnO films were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). XRD pattern confirmed that the hexagonal wurtzite structure of ZnO nano-stripes were of polycrystalline structure. The optical properties of the ZnO nano-stripes arrays were characterized by Raman and photoluminescence spectroscopies at room temperature (RT). Micro-Raman results showed that A1(LO) of hexagonal ZnO nano-stripes have been observed at 520 cm-1. PL spectrum peak is obvious at 368 cm-1 for ZnO film grown on zinc foil substrate. The PL spectrum peak position in ZnO nano-stripe is blue-shifted with respect to that in unstrained ZnO bulk (381nm). This can be clarified by the approximately smaller statistical area spreading of the nano-stripes. Nano-stripes ZnO can be used as a buffer or intermediate layer to lessen substrate-induced strain, similar to porous silicon.},
year = {2013}
}
TY - JOUR T1 - Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method AU - L. S. Chuah AU - Asmiet Ramizy AU - M. A. Mahdi AU - Z. Hassan Y1 - 2013/03/10 PY - 2013 N1 - https://doi.org/10.11648/j.ijmsa.20130202.17 DO - 10.11648/j.ijmsa.20130202.17 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 74 EP - 77 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20130202.17 AB - To date, no approaches have been reported to fabricate the ZnO nano-stripes arrays on zinc foil substrate. In this method, zinc (Zn) foil was applied as substrates. The ZnO nano-stripes arrays on zinc foil substrate were prepared via photoelectrochemical (PEC) wet etching method without using templates and catalysts. To prepare ZnO nano-stripes structures, the samples were dipped into a mixture of HNO3:Ethanol (1:5) with current densities of 127 mA/cm2, and subjected to external illumination from a 100W lamp. The constant etch time is 30 min. After etching, the surface morphology and the nano-stripes structure of the ZnO films were characterized by scanning electron microscope (SEM), energy dispersive X-ray analysis (EDX) and X-ray diffraction (XRD). XRD pattern confirmed that the hexagonal wurtzite structure of ZnO nano-stripes were of polycrystalline structure. The optical properties of the ZnO nano-stripes arrays were characterized by Raman and photoluminescence spectroscopies at room temperature (RT). Micro-Raman results showed that A1(LO) of hexagonal ZnO nano-stripes have been observed at 520 cm-1. PL spectrum peak is obvious at 368 cm-1 for ZnO film grown on zinc foil substrate. The PL spectrum peak position in ZnO nano-stripe is blue-shifted with respect to that in unstrained ZnO bulk (381nm). This can be clarified by the approximately smaller statistical area spreading of the nano-stripes. Nano-stripes ZnO can be used as a buffer or intermediate layer to lessen substrate-induced strain, similar to porous silicon. VL - 2 IS - 2 ER -
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