The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.
Published in | International Journal of Materials Science and Applications (Volume 6, Issue 1) |
DOI | 10.11648/j.ijmsa.20170601.17 |
Page(s) | 45-53 |
Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
Copyright |
Copyright © The Author(s), 2017. Published by Science Publishing Group |
III-V Photodetectors, Heterostructures, Near-Infrared, Quantum Efficiency, Spectral Response, Window Layer
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APA Style
Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. (2017). Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. International Journal of Materials Science and Applications, 6(1), 45-53. https://doi.org/10.11648/j.ijmsa.20170601.17
ACS Style
Mamadou Dia; Babacar Mbow; EL Hadji Mamadou Keita; Abdoul Aziz Correa; Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int. J. Mater. Sci. Appl. 2017, 6(1), 45-53. doi: 10.11648/j.ijmsa.20170601.17
AMA Style
Mamadou Dia, Babacar Mbow, EL Hadji Mamadou Keita, Abdoul Aziz Correa, Mamadou Lamine Sow. Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect. Int J Mater Sci Appl. 2017;6(1):45-53. doi: 10.11648/j.ijmsa.20170601.17
@article{10.11648/j.ijmsa.20170601.17, author = {Mamadou Dia and Babacar Mbow and EL Hadji Mamadou Keita and Abdoul Aziz Correa and Mamadou Lamine Sow}, title = {Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect}, journal = {International Journal of Materials Science and Applications}, volume = {6}, number = {1}, pages = {45-53}, doi = {10.11648/j.ijmsa.20170601.17}, url = {https://doi.org/10.11648/j.ijmsa.20170601.17}, eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20170601.17}, abstract = {The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance.}, year = {2017} }
TY - JOUR T1 - Theoretical Study of the Spectral Response in Near Infrared of III-V Photodetectors Based on Al, Ga, In, and Sb: The Window Layer Effect AU - Mamadou Dia AU - Babacar Mbow AU - EL Hadji Mamadou Keita AU - Abdoul Aziz Correa AU - Mamadou Lamine Sow Y1 - 2017/01/18 PY - 2017 N1 - https://doi.org/10.11648/j.ijmsa.20170601.17 DO - 10.11648/j.ijmsa.20170601.17 T2 - International Journal of Materials Science and Applications JF - International Journal of Materials Science and Applications JO - International Journal of Materials Science and Applications SP - 45 EP - 53 PB - Science Publishing Group SN - 2327-2643 UR - https://doi.org/10.11648/j.ijmsa.20170601.17 AB - The spectral responses are particularly important for the design of photodetectors operating in the wavelength range between 0,78μm to 2,6μm. To elaborate each device; we purpose a theoretical model to calculate the internal quantum efficiency. The theoretical curves of the internal quantum efficiency are obtained, by simulation to define the geometrical and photoelectric parameters, of the photodetectors devices. The modelling of the various devices allows us to analyze the situation at surface and in volume of each model. The results and the theoretical models, of the heterostructures based on Ga1-xInxSb, Ga1-yAlySb grown on GaSb substrate, with window layer are shown after simulation of the internal quantum efficiency and sensitivity of each model. Analysis of these results allowed us to appreciate which of these models is more efficient and to identify the photoelectric parameters to improve for better internal quantum efficiency. We found that the presence of the window layer significantly reduces the losses by recombination thereby improving the photodetector performance. VL - 6 IS - 1 ER -