In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N+/P+/N+ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells.
| Published in | American Journal of Energy Engineering (Volume 13, Issue 4) |
| DOI | 10.11648/j.ajee.20251304.12 |
| Page(s) | 171-178 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2025. Published by Science Publishing Group |
Solar Cell, Optimization, Magnetic Field Inclination Angle, Base Thickness, Highly-doped Base
| [1] | Ngom, M. I., Cheikh, M. L., Ba, M. Y., Ndiaye, M., Ba, A. M., Gueye, S., Thiame, M., Sow, O., Wade, M., and Sissoko, G. Magnetoresistance in a silicon solar cell with parallel vertical junctions in static regime under polychromatic illumination. International Journal of Advanced Research (IJAR). 2022, 11(6), 752–763. |
| [2] | Sissoko, G., Gaye, I., Ly, I., Lemrabott, O. H., Dieng, B., Gueye, S., and Diouf, M. S. Analytical study of the behavior of a bifacial solar cell under magnetic field. Revue des Énergies Renouvelables. 1999, 2(3), 187–196. |
| [3] | Mbow, N. and Sissoko, G. Modelling of a double junction bifacial solar cell. Journal of Photovoltaic. 2002, 2(1), 35-43. |
| [4] | Traore, S., Diedhiou, A., Thiame, M., Tine, M., Camara, M. and Diatta, L. Dynamic Analysis of ThermoMagnetic Effects on a N⁺/P/P⁺ Silicon Solar Cell. Journal of Materials Science and Chemical Engineering. 2025, 13, 55-65. |
| [5] | Sourabié, I., Zerbo, I., Zoungrana, M., Combari, D. U. and Bathiebo, D. J. Effect of Incidence Angle of Magnetic Field on the Performance of a Polycrystalline Silicon Solar Cell under Multispectral Illumination. Smart Grid and Renewable Energy, 2017, 8, 325-335. |
| [6] | Thiame, M., Camara, M., Cheikh, M. L., Gueye, S., Sow, O., Wade, M., and Sissoko, G. Study of a bifacial silicon solar cell in static regime subjected to a magnetic field under monochromatic illumination from the rear face: Determination of the optimal base thickness. International Journal of Advanced Research (IJAR), 2023, 11(6), pp. 889–901. |
| [7] | Ndiaye, M. L. & Sissoko, G. Combined effects of temperature and magnetic field on a solar cell. International Journal of Renewable Energy Research (IJRER), 2023, 13(4), pp. 1987–1996. |
| [8] | Diop P., Samb M L., and Diop M. M.. Study in transcient regime of the electrical parameters of silicon solar cell with multi vertical parallel and place in short-circuit: influence of temperature and magnetic field. Inc: Proceeding of the 7th international conference on Energy Harverting Storage and transfer (EHST 2024), Paper EHST-108. |
| [9] | Assal, I. and Slimani, M. A.. Study of a CZTS/Si double junction solar cell. Master's Thesis, Saad Dahleb University – Blida. 2022. |
| [10] | Ndiaye, F, M., Ba, M, L., Ba, M, A., Diop, G., Diatta, I., Sow, E., Mballo, O. and Sissoko, G.. Lamella silicon optimum width determination under temperature. International Journal of Advanced Research (IJAR). 2020, 8(06), 1409-1419. |
| [11] | Faye D., Dione B., Boiro M., Diop P.,. Determination of the serie resistances of a series vertical juntion silicon (N+/P/P+) solar cell under polychromatic illumination and magnetic field: effect of optimum thickness. Journal of Modern Physics. 2024, 15(10), 317-382. |
| [12] | Combari, D. U., Ramde, E. W., Korgo, B., Saré, R., Zoungrana, M. and Zerbo, I. Investigating the Effect of Inclination Angle of Magnetic Field Vector on Silicon PV Modules. International Journal of Photoenergy,. 2021, 6. |
| [13] | Sourabié I, Savadogo M., Soro B., Saré R., Zoundi C., Zoungrana M., Zerbo I.,. Corrective effect of the angle of incidence of the magnetic field intensity on the electrical performance (serie and shunt resistances) of a bifacial silicon cell. Energy and Power Engineering. 2024, 16(9), 215-229. |
| [14] | Diallo, H. L., Amadou, S. M., Wereme, A., and Sissoko, G.. New Approach of Both Junction and Back Surface Recombination Velocities in a 3D Modelling Study of a Polycrystalline Silicon Solar Cell. European Physical Journal Applied Physics. 2008, 42, 203-211. |
| [15] | Ba, A. M., Diop, G., Diatta, I., Mané, R., Ngom, M. I., Ba, M. Y., Loum, K., Traoré, Y., Thiame, M., Gueye, S., Sow, O., Wade, M., and Sissoko, G.. Determination of the junction intrinsic recombination velocity of minority carriers in the base of parallel vertical multi-junction silicon solar cell using the open-circuit voltage calibration curve technique. Journal of Chemical, Biological and Physical Sciences. 2023, 13(2), pp. 112–124, |
| [16] | Ngom, M. I., Zouma, B., Thiame, M., Bako, Z. N., Gueye, A., and Sissoko, G. Theoretical study of a parallel vertical multi-junction silicon cell under multispectral illumination: Influence of external magnetic field on the electrical parameters. International Journal of Advanced Technology and Engineering Research (IJATER). 2012, Vol. 2, pp. 101–109. |
| [17] | Sissoko, A. Correa, E. Nanema, M. N. Diarra, A. L. Ndiaye, M. Adj,. Recombination Parameters measurement in silicon double sided surface field cell. Proceeding of the World Renewable Energy Congress, 20 – 25 September 1998, Pp. 1856 – 1859. |
| [18] | Meier, D. L., Hwang, J.-M. and Campbell, R. B. The Effect of Doping Density and Injection Level on Minority Carrier Lifetime as Applied to Bifacial Dendritic Web Silicon Solar Cells. IEEE Transactions on Electron Devices. 1988, 35, 70-79. |
| [19] | BA, F., Ndiaye, E., Faye, S., Diao, D., Traore, P. T., Ndiaye, M. and Diagne, I. Effects of light intensity, illumination depth and temperature on the parameters of a silicon solar cell in current-generating mode. International Journal Of Advanced Research (IJAR).2022, 10(12), 146-153, |
| [20] | Terheiden, B., Hahn, G., Fath, P., and Bucher, E. The Lamella Silicon Solar Cell. 16th European Photovoltaic Solar Energy Conference, Glasgow, 1-5 May 2000, pp. 1377-1380. |
| [21] | Faye, D., Diop, P., Dione, B., and Ba, M; Y.. Influence of the magnetic field and optimum base thickness of a series vertical-junction silicon solar cell under polychromatic illumination and magnetic field on capacitance: Determination of transition and dark capacitances. American Journal of Energy Research. 2025, 13(3), 80-85. |
APA Style
Diatta, L., Thiame, M., Traore, S., Camara, M. (2025). Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle. American Journal of Energy Engineering, 13(4), 171-178. https://doi.org/10.11648/j.ajee.20251304.12
ACS Style
Diatta, L.; Thiame, M.; Traore, S.; Camara, M. Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle. Am. J. Energy Eng. 2025, 13(4), 171-178. doi: 10.11648/j.ajee.20251304.12
AMA Style
Diatta L, Thiame M, Traore S, Camara M. Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle. Am J Energy Eng. 2025;13(4):171-178. doi: 10.11648/j.ajee.20251304.12
Share This Article
Twitter
Linked In
Facebook
Copy
Download@article{10.11648/j.ajee.20251304.12,
author = {Landing Diatta and Moustapha Thiame and Sada Traore and Moussa Camara},
title = {Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle},
journal = {American Journal of Energy Engineering},
volume = {13},
number = {4},
pages = {171-178},
doi = {10.11648/j.ajee.20251304.12},
url = {https://doi.org/10.11648/j.ajee.20251304.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20251304.12},
abstract = {In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N+/P+/N+ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells.},
year = {2025}
}
TY - JOUR T1 - Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle AU - Landing Diatta AU - Moustapha Thiame AU - Sada Traore AU - Moussa Camara Y1 - 2025/12/08 PY - 2025 N1 - https://doi.org/10.11648/j.ajee.20251304.12 DO - 10.11648/j.ajee.20251304.12 T2 - American Journal of Energy Engineering JF - American Journal of Energy Engineering JO - American Journal of Energy Engineering SP - 171 EP - 178 PB - Science Publishing Group SN - 2329-163X UR - https://doi.org/10.11648/j.ajee.20251304.12 AB - In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N+/P+/N+ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells. VL - 13 IS - 4 ER -
Laboratory of Chemical and Physics of Materials, Assane Seck University, Ziguinchor, Senegal
Laboratory of Chemical and Physics of Materials, Assane Seck University, Ziguinchor, Senegal
Laboratory of Chemical and Physics of Materials, Assane Seck University, Ziguinchor, Senegal;Laboratory of Semiconductor and Solar Energy, Cheikh Anta Diop University, Dakar, Senegal
Laboratory of Chemical and Physics of Materials, Assane Seck University, Ziguinchor, Senegal;Faculty of Science, Gamal Abdel Nasser University, Conakry, Guinea
Information