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Research Article
Design Window for SHJ Cells: Joint Impact of Base Thickness and Doping Under AM1.5G
Issue:
Volume 13, Issue 4, December 2025
Pages:
158-170
Received:
9 October 2025
Accepted:
17 October 2025
Published:
31 October 2025
Abstract: We numerically map the joint impact of base thickness (e) and donor density (ND) on silicon heterojunction (SHJ) cells under AM1.5G using SILVACO ATLAS (drift–diffusion with SRH/Auger and field/concentration dependent mobilities). Optics is treated by 2D specular ray tracing (no texturing), so results constitute a conservative baseline at small e. To isolate e and ND, the a Si:H/c Si interface is held fixed across parameter sweeps. We identify an absorption–collection trade off: Jsc increases from thin to moderate e and then saturates or declines; Voc decreases with increasing e and high ND due to enhanced recombination. The fill factor peaks at small e under low to moderate ND. Efficiency exhibits a robust optimum at moderate thickness (e.g., e ≈ 120-160μm) and intermediate ND, whereas heavy doping shifts the optimum but ultimately degrades Voc/FF via Auger (and, in extended models, band gap narrowing). From a design standpoint, we delineate a practical window that balances resistivity and recombination while avoiding heavy doping. Limitations: absence of light trapping and fixed interface, mean our absolute metrics are conservative, but trends and optima are robust. Planned extensions include Lambertian/textured optics, interface sweeps, and calibrated BGN/contact models to raise absolute values without altering the identified trade offs.
Abstract: We numerically map the joint impact of base thickness (e) and donor density (ND) on silicon heterojunction (SHJ) cells under AM1.5G using SILVACO ATLAS (drift–diffusion with SRH/Auger and field/concentration dependent mobilities). Optics is treated by 2D specular ray tracing (no texturing), so results constitute a conservative baseline at small e. ...
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Research Article
Optimization of a Highly Doped Silicon Vertical Junction Silicon Solar Cell: Cross-effects of Base Thickness and Magnetic Field Inclination Angle
Issue:
Volume 13, Issue 4, December 2025
Pages:
171-178
Received:
14 October 2025
Accepted:
30 October 2025
Published:
8 December 2025
Abstract: In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnetic field by analyzing the coupled effects of two critical parameters: the base thickness and the magnetic field inclination angle. The proposed model is founded on the one-dimensional, steady-state equations governing the generation, diffusion, and recombination of minority charge carriers, specifically aiming to determine the optimum base thickness and the most favorable field orientation. To achieve this objective, we developed a comprehensive analytical model that accurately describes the electrical behavior of a highly-doped N+/P+/N+ vertical-junction solar cell under steady-state operation. The model assumes vertical monochromatic photo-generation, lateral carrier collection, and a static magnetic field applied at a variable inclination angle (θ) relative to the x-axis. Through rigorous numerical simulations, the influence of the base thickness (Wp) and the magnetic field inclination angle (θ) on fundamental photovoltaic parameters namely the short-circuit current density (Jsc), the open-circuit voltage (Voc), and the conversion efficiency (η) is systematically evaluated. This approach offers a pertinent strategy for developing highly efficient silicon solar cells designed for operational environments subject to significant electromagnetic perturbation. The findings demonstrate that the synergistic combination of a precisely engineered base thickness (approximately Wp=0.025cm) and an optimal magnetic field orientation (θ≈90°) is paramount for maximizing the performance of the silicon solar cells.
Abstract: In a context marked by the integration of silicon photovoltaic cells into environments subjected to magnetic fields, such as specialized or industrial systems, several key questions persist regarding their operational efficiency. This study is therefore designed to explore the performance optimization of a silicon solar cell under an applied magnet...
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Research Article
Modeling and Optimization of an InxGa1-xN Solar Cell Subjected to a Magnetic Field Under Monochromatic Illumination
Issue:
Volume 13, Issue 4, December 2025
Pages:
179-188
Received:
29 October 2025
Accepted:
11 November 2025
Published:
9 December 2025
Abstract: This work focuses on the modeling and optimization of an InxGa(1-x)N based on photovoltaic cell subjected to a magnetic field under monochromatic illumination. Using a mathematical model adapted to our photovoltaic cell, we solved the continuity equation for excess minority carriers in the base in the presence of the magnetic field. This solution enabled us to determine several fundamental parameters of the photovoltaic cell as a function of the intensity of the applied magnetic field, including: the density of excess minority carriers in the base, the short-circuit current (Jcc), the open-circuit voltage (Voc), the power (P), the form factor (FF), and the efficiency (η). We then conducted a numerical simulation to optimize the indium fraction (x) as a function of the applied magnetic field and evaluate the impact of the latter on electrical performance, in particular power and efficiency. Analysis of the results shows that low magnetic field values (B≤ 10-3 T) have virtually no effect on the efficiency of the photovoltaic cell. However, efficiency gradually decreases for more intense fields (B > 10-3 T). The best performance of the photovoltaic cell was obtained for an indium fraction x = 0.5 and a base thickness H=0.2µm. These optimal conditions result in a maximum efficiency η = 28.40%, with a short-circuit current Jcc = 0.024 A.cm-2, an open-circuit voltage Voc = 1.3 V, and a form factor FF = 90.2%. This efficacy value obtained is close to the 28.53% value reported by F. B. Pelap et al (2021), suggesting good agreement between studies.
Abstract: This work focuses on the modeling and optimization of an InxGa(1-x)N based on photovoltaic cell subjected to a magnetic field under monochromatic illumination. Using a mathematical model adapted to our photovoltaic cell, we solved the continuity equation for excess minority carriers in the base in the presence of the magnetic field. This solution e...
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,
Aly Toure
