Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis

Moussa Toure; Sidi Mohamed Mohamed-Yahya; Cheick Tidiane Goudiaby; Ahmed Mohamed-Yahya; Mamadou Lamine Samb

doi:doi:10.11648/j.ajee.20261403.17

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Absorber-Doping Electrical Trade-off and MgF₂ Optical Enhancement in CIGS/In₂S₃ Thin-Film Solar Cells: A TCAD Analysis

Moussa Toure

, Sidi Mohamed Mohamed-Yahya

, Cheick Tidiane Goudiaby

, Ahmed Mohamed-Yahya

, Mamadou Lamine Samb^*

Published in American Journal of Energy Engineering (Volume 14, Issue 3)

Received: 22 August 2026 Accepted: 1 September 2026 Published: 20 September 2026

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Abstract

Thin-film Cu(In,Ga)Se2 (CIGS) solar cells with a non-toxic In₂S₃ buffer are a credible alternative to CdS-based devices. This work investigates an Al-Ni/MgF₂/ZnO:Al/i-ZnO/In₂S₃/CIGS/Mo solar-cell architecture using Silvaco ATLAS, with particular emphasis on the influence of CIGS absorber acceptor concentration (N_A, 1×10¹⁴–1×10¹⁷ cm^-3) on J_sc, V_oc, FF, η, and the apparent series (R_s) and shunt (R_sh) resistances, with and without an MgF₂ antireflection coating. V_oc rises almost monotonically with N_A (+32%) while J_sc falls (−6.6%), so the pronounced non-monotonic evolution of FF primarily determines the location of the efficiency maximum. The highest simulated efficiency occurs at N_A = 3×10¹⁶ cm^-3 (η = 23.65% with MgF₂ versus 20.99% without), but this maximum sits inside a fairly flat doping window (1×10¹⁶-6×10¹⁶ cm^-3, η ≥ 95% of the peak) rather than a single sharp optimum. The resulting data reveal a strong association between the FF collapse and the increase in apparent R_s (r ≈ −0.99 overall, ≈ −0.999 above 3×10¹⁶ cm^-3), linking the efficiency roll-off to degraded resistive transport without proving a single cause. The MgF₂ layer delivers a nearly constant J_sc gain (12.16%), a marginal V_oc effect (0.4-0.5%), and a negligible FF effect, so its efficiency gain (12.3-12.8%) is almost entirely inherited from J_sc. Together, these results distinguish the electrical trade-off associated with absorber doping from the predominantly optical contribution of MgF₂ and provide a practical doping window for CIGS/In₂S₃ device design.

Published in	American Journal of Energy Engineering (Volume 14, Issue 3)
DOI	10.11648/j.ajee.20261403.17
Page(s)	158-171
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2026. Published by Science Publishing Group

Keywords

CIGS, In₂S₃, MgF₂ Antireflection Coating, Apparent Series Resistance, Apparent Shunt Resistance, Doping Window, Silvaco ATLAS, Thin-Film Solar Cell

References

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Toure, M., Mohamed-Yahya, S. M., Goudiaby, C. T., Mohamed-Yahya, A., Samb, M. L. (2026). Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. American Journal of Energy Engineering, 14(3), 158-171. https://doi.org/10.11648/j.ajee.20261403.17

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Toure, M.; Mohamed-Yahya, S. M.; Goudiaby, C. T.; Mohamed-Yahya, A.; Samb, M. L. Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. Am. J. Energy Eng. 2026, 14(3), 158-171. doi: 10.11648/j.ajee.20261403.17

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Toure M, Mohamed-Yahya SM, Goudiaby CT, Mohamed-Yahya A, Samb ML. Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. Am J Energy Eng. 2026;14(3):158-171. doi: 10.11648/j.ajee.20261403.17

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@article{10.11648/j.ajee.20261403.17,
  author = {Moussa Toure and Sidi Mohamed Mohamed-Yahya and Cheick Tidiane Goudiaby and Ahmed Mohamed-Yahya and Mamadou Lamine Samb},
  title = {Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis},
  journal = {American Journal of Energy Engineering},
  volume = {14},
  number = {3},
  pages = {158-171},
  doi = {10.11648/j.ajee.20261403.17},
  url = {https://doi.org/10.11648/j.ajee.20261403.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20261403.17},
  abstract = {Thin-film Cu(In,Ga)Se2 (CIGS) solar cells with a non-toxic In2S3 buffer are a credible alternative to CdS-based devices. This work investigates an Al-Ni/MgF₂/ZnO:Al/i-ZnO/In₂S₃/CIGS/Mo solar-cell architecture using Silvaco ATLAS, with particular emphasis on the influence of CIGS absorber acceptor concentration (NA, 1×1014–1×1017 cm-3) on Jsc, Voc, FF, η, and the apparent series (Rs) and shunt (Rsh) resistances, with and without an MgF₂ antireflection coating. Voc rises almost monotonically with NA (+32%) while Jsc falls (−6.6%), so the pronounced non-monotonic evolution of FF primarily determines the location of the efficiency maximum. The highest simulated efficiency occurs at NA = 3×1016 cm-3 (η = 23.65% with MgF2 versus 20.99% without), but this maximum sits inside a fairly flat doping window (1×1016-6×1016 cm-3, η ≥ 95% of the peak) rather than a single sharp optimum. The resulting data reveal a strong association between the FF collapse and the increase in apparent Rs (r ≈ −0.99 overall, ≈ −0.999 above 3×1016 cm-3), linking the efficiency roll-off to degraded resistive transport without proving a single cause. The MgF2 layer delivers a nearly constant Jsc gain (12.16%), a marginal Voc effect (0.4-0.5%), and a negligible FF effect, so its efficiency gain (12.3-12.8%) is almost entirely inherited from Jsc. Together, these results distinguish the electrical trade-off associated with absorber doping from the predominantly optical contribution of MgF₂ and provide a practical doping window for CIGS/In₂S₃ device design.},
 year = {2026}
}

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TY  - JOUR
T1  - Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis
AU  - Moussa Toure
AU  - Sidi Mohamed Mohamed-Yahya
AU  - Cheick Tidiane Goudiaby
AU  - Ahmed Mohamed-Yahya
AU  - Mamadou Lamine Samb
Y1  - 2026/09/20
PY  - 2026
N1  - https://doi.org/10.11648/j.ajee.20261403.17
DO  - 10.11648/j.ajee.20261403.17
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 158
EP  - 171
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20261403.17
AB  - Thin-film Cu(In,Ga)Se2 (CIGS) solar cells with a non-toxic In2S3 buffer are a credible alternative to CdS-based devices. This work investigates an Al-Ni/MgF₂/ZnO:Al/i-ZnO/In₂S₃/CIGS/Mo solar-cell architecture using Silvaco ATLAS, with particular emphasis on the influence of CIGS absorber acceptor concentration (NA, 1×1014–1×1017 cm-3) on Jsc, Voc, FF, η, and the apparent series (Rs) and shunt (Rsh) resistances, with and without an MgF₂ antireflection coating. Voc rises almost monotonically with NA (+32%) while Jsc falls (−6.6%), so the pronounced non-monotonic evolution of FF primarily determines the location of the efficiency maximum. The highest simulated efficiency occurs at NA = 3×1016 cm-3 (η = 23.65% with MgF2 versus 20.99% without), but this maximum sits inside a fairly flat doping window (1×1016-6×1016 cm-3, η ≥ 95% of the peak) rather than a single sharp optimum. The resulting data reveal a strong association between the FF collapse and the increase in apparent Rs (r ≈ −0.99 overall, ≈ −0.999 above 3×1016 cm-3), linking the efficiency roll-off to degraded resistive transport without proving a single cause. The MgF2 layer delivers a nearly constant Jsc gain (12.16%), a marginal Voc effect (0.4-0.5%), and a negligible FF effect, so its efficiency gain (12.3-12.8%) is almost entirely inherited from Jsc. Together, these results distinguish the electrical trade-off associated with absorber doping from the predominantly optical contribution of MgF₂ and provide a practical doping window for CIGS/In₂S₃ device design.
VL  - 14
IS  - 3
ER  -

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Author Information

Moussa Toure

Department of Physics and Chemistry, Iba Der Thiam University, Thies, Senegal

Contact Email

http://orcid.org/0009-0005-4663-9533
Sidi Mohamed Mohamed-Yahya

Applied Research Unit for Renewable Energies, University of Nouakchott, Nouakchott, Mauritania

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http://orcid.org/0009-0004-1964-0005
Cheick Tidiane Goudiaby

Department of Physics and Chemistry, Iba Der Thiam University, Thies, Senegal

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http://orcid.org/0009-0003-8528-3731
Ahmed Mohamed-Yahya

Applied Research Unit for Renewable Energies, University of Nouakchott, Nouakchott, Mauritania

Contact Email

http://orcid.org/0000-0002-3596-1819
Mamadou Lamine Samb

Department of Physics and Chemistry, Iba Der Thiam University, Thies, Senegal

Contact Email

http://orcid.org/0000-0003-0695-553X

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APA Style

Toure, M., Mohamed-Yahya, S. M., Goudiaby, C. T., Mohamed-Yahya, A., Samb, M. L. (2026). Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. American Journal of Energy Engineering, 14(3), 158-171. https://doi.org/10.11648/j.ajee.20261403.17

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ACS Style

Toure, M.; Mohamed-Yahya, S. M.; Goudiaby, C. T.; Mohamed-Yahya, A.; Samb, M. L. Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. Am. J. Energy Eng. 2026, 14(3), 158-171. doi: 10.11648/j.ajee.20261403.17

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AMA Style

Toure M, Mohamed-Yahya SM, Goudiaby CT, Mohamed-Yahya A, Samb ML. Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis. Am J Energy Eng. 2026;14(3):158-171. doi: 10.11648/j.ajee.20261403.17

Copy | Download

@article{10.11648/j.ajee.20261403.17,
  author = {Moussa Toure and Sidi Mohamed Mohamed-Yahya and Cheick Tidiane Goudiaby and Ahmed Mohamed-Yahya and Mamadou Lamine Samb},
  title = {Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis},
  journal = {American Journal of Energy Engineering},
  volume = {14},
  number = {3},
  pages = {158-171},
  doi = {10.11648/j.ajee.20261403.17},
  url = {https://doi.org/10.11648/j.ajee.20261403.17},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ajee.20261403.17},
  abstract = {Thin-film Cu(In,Ga)Se2 (CIGS) solar cells with a non-toxic In2S3 buffer are a credible alternative to CdS-based devices. This work investigates an Al-Ni/MgF₂/ZnO:Al/i-ZnO/In₂S₃/CIGS/Mo solar-cell architecture using Silvaco ATLAS, with particular emphasis on the influence of CIGS absorber acceptor concentration (NA, 1×1014–1×1017 cm-3) on Jsc, Voc, FF, η, and the apparent series (Rs) and shunt (Rsh) resistances, with and without an MgF₂ antireflection coating. Voc rises almost monotonically with NA (+32%) while Jsc falls (−6.6%), so the pronounced non-monotonic evolution of FF primarily determines the location of the efficiency maximum. The highest simulated efficiency occurs at NA = 3×1016 cm-3 (η = 23.65% with MgF2 versus 20.99% without), but this maximum sits inside a fairly flat doping window (1×1016-6×1016 cm-3, η ≥ 95% of the peak) rather than a single sharp optimum. The resulting data reveal a strong association between the FF collapse and the increase in apparent Rs (r ≈ −0.99 overall, ≈ −0.999 above 3×1016 cm-3), linking the efficiency roll-off to degraded resistive transport without proving a single cause. The MgF2 layer delivers a nearly constant Jsc gain (12.16%), a marginal Voc effect (0.4-0.5%), and a negligible FF effect, so its efficiency gain (12.3-12.8%) is almost entirely inherited from Jsc. Together, these results distinguish the electrical trade-off associated with absorber doping from the predominantly optical contribution of MgF₂ and provide a practical doping window for CIGS/In₂S₃ device design.},
 year = {2026}
}

Copy | Download

TY  - JOUR
T1  - Absorber-Doping Electrical Trade-off and MgF2 Optical Enhancement in CIGS/In2S3 Thin-Film Solar Cells: A TCAD Analysis
AU  - Moussa Toure
AU  - Sidi Mohamed Mohamed-Yahya
AU  - Cheick Tidiane Goudiaby
AU  - Ahmed Mohamed-Yahya
AU  - Mamadou Lamine Samb
Y1  - 2026/09/20
PY  - 2026
N1  - https://doi.org/10.11648/j.ajee.20261403.17
DO  - 10.11648/j.ajee.20261403.17
T2  - American Journal of Energy Engineering
JF  - American Journal of Energy Engineering
JO  - American Journal of Energy Engineering
SP  - 158
EP  - 171
PB  - Science Publishing Group
SN  - 2329-163X
UR  - https://doi.org/10.11648/j.ajee.20261403.17
AB  - Thin-film Cu(In,Ga)Se2 (CIGS) solar cells with a non-toxic In2S3 buffer are a credible alternative to CdS-based devices. This work investigates an Al-Ni/MgF₂/ZnO:Al/i-ZnO/In₂S₃/CIGS/Mo solar-cell architecture using Silvaco ATLAS, with particular emphasis on the influence of CIGS absorber acceptor concentration (NA, 1×1014–1×1017 cm-3) on Jsc, Voc, FF, η, and the apparent series (Rs) and shunt (Rsh) resistances, with and without an MgF₂ antireflection coating. Voc rises almost monotonically with NA (+32%) while Jsc falls (−6.6%), so the pronounced non-monotonic evolution of FF primarily determines the location of the efficiency maximum. The highest simulated efficiency occurs at NA = 3×1016 cm-3 (η = 23.65% with MgF2 versus 20.99% without), but this maximum sits inside a fairly flat doping window (1×1016-6×1016 cm-3, η ≥ 95% of the peak) rather than a single sharp optimum. The resulting data reveal a strong association between the FF collapse and the increase in apparent Rs (r ≈ −0.99 overall, ≈ −0.999 above 3×1016 cm-3), linking the efficiency roll-off to degraded resistive transport without proving a single cause. The MgF2 layer delivers a nearly constant Jsc gain (12.16%), a marginal Voc effect (0.4-0.5%), and a negligible FF effect, so its efficiency gain (12.3-12.8%) is almost entirely inherited from Jsc. Together, these results distinguish the electrical trade-off associated with absorber doping from the predominantly optical contribution of MgF₂ and provide a practical doping window for CIGS/In₂S₃ device design.
VL  - 14
IS  - 3
ER  -

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