Research Article
Calculations of Stopping Power, Straggling and Range Projected of FeKr+
Mohamed Farjallah*
Issue:
Volume 7, Issue 1, June 2024
Pages:
1-9
Received:
6 March 2024
Accepted:
27 March 2024
Published:
17 May 2024
DOI:
10.11648/j.ep.20240701.11
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Abstract: The present work consists of the simulation of the interaction of a beam of Kr+ ions with a solid iron target by the software SRIM (Stopping and Range of Ions In Matter). Our goal is to calculate different parameters related to sputtering and ion implantation in a target, such as the spatial distribution of implanted ions, the distributions of electronic and nuclear energy losses as a function of penetration depth and sputtering efficiency, as well as the damage created inside the target. The sputter induced photon spectroscopy technique was used to study the luminescence spectra of the species sputtered from Iron powder, during 5 keV Kr+ ions bombardment in vacuum better than 107 torr. The optical spectra recorded between 350 and 470 nm exhibit discrete lines which are attributed to neutral excited atoms of Iron (Fe). The experiments are also performed under 105 torr ultra-pure oxygen partial pressure. To ensure the maximum efficiency of molecular modification process, energy of irradiation was decided by using of SRIM software. Based on SRIM simulation of Iron ions interaction with Krypton, the areas on which effect of high energy ions will maximum were predicted. A comparative analysis of molecular before and after irradiation was carried out by scanning electron microscopy. The maximum change in Krypton morphology, in the form of destruction of walls, was appeared at a distance of about μm from the start point of Fe+ ions track inside the molecular. A substantiation of reason of wall degradation in this area was proposed.
Abstract: The present work consists of the simulation of the interaction of a beam of Kr+ ions with a solid iron target by the software SRIM (Stopping and Range of Ions In Matter). Our goal is to calculate different parameters related to sputtering and ion implantation in a target, such as the spatial distribution of implanted ions, the distributions of elec...
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